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CFD-TOPO Feature Scale Evolution Solver |
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CFD-TOPO predicts the transport, chemistry, etch and
deposition of semiconductor materials on the microscopic scale. It
enables prediction of three-dimensional topological evolution for
multiple materials during thermal or plasma enhanced fabrication of
electronic devices.
CFD-TOPO can be operated as a stand-alone code, or coupled
with CFD-ACE+ reactor scale models for an integrated multi-scale
solution. Advanced capabilities of CFD-TOPO include:
- Three-dimensional
- Multiple materials and complex chemistries
- Fast adaptive meshing
- Fully integrated with CFD-ACE+
- Fully commercialized and supported
- Can be customized for a specific reactor or processes, for ease-of-use and accuracy
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