Y.-T. Kim, Y.-N. Hwang, K.-H. Lee, S.-H. Lee, C.-W. Jeong, S.-J. Ahn, F. Yeung*,
G.-H. Koh, H.-S. Jeong, W.-Y. Chung, T.-K. Kim, Y.-K. Park, K.-N. Kim, and J.-T. Kong Samsung Electronics
Abstract
In this paper, we analyze the Initialization of Chalcogenide Material (ICM) mechanism and propose the next generation PRAM scheme. It is proposed that the ICM operation power can be lowered by decreasing the chalcogenide film thickness. To overcome the inherent limitation of high operation power, the self-heat confined structure is proposed and the ICM power can be significantly reduced. The chalcogenide scaling scheme, based on new proposed structure can resolve the operation power limitation in PRAM development.
Keywords
Source
Extended Abstracts of the 2004 International Conference on Solid State Devices and Materials, Tokyo, 2004,
- 244 -
D-3-2
pp. 244-245
