A numerical model analysis on SiC crystal growth by modified Lely method was performed using CFD-ACE for experimental equipments. This model includes calculations of induction heating, radiation, conduction and convection heat transfer, as well as the chemical reactions. Using this model, we studied the effect of operational parameters on the temperature profiles. And the temperature profile was compared with grown crystal and remained source shape after growing process. Chemical reactions and species transports at the gas phase in the crucible were also modeled. Using this model, we studied about gas species changes in the crucible and calculated the deposition rate of SiC at the seed surface. And early stage of sublimation, initial etching phenomena means what backward sublimation from seed to gas was observed.