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Home arrow CFD Paper Library arrow Physics Used arrow Heat Transfer arrow Subcategories and papers
Physics Used - Heat Transfer
Effects of showerhead shapes on the flowfields in a RF-PECVD reactor
You-Jae Kim, Jin-Hyo Boo, Byungyou Hong, Youn J. Kim SungKyunKwan University
 
A Model for Two-Dimensional Transient Laser Heating of a Cylindrical Solid
Chang-Won Jeong1 and Kyung-Woo Yi Seoul National University Soo-Hyung Seo and Myung-Hwan Oh NeosemiTech Corporation
Simulation of Photoresist Thermal Flow Process with Viscous Flow Model
Won-Young Chung, Tai-Kyung Kim, Yero Lee, Jin-Young Yoon, Hyun-Woo Kim, Young-Kwan Park and Jeong-Taek Kong Samsung Electronics
Run-to-Run Control of Inductively Coupled C2F6 Plasma Etching of SiO2: Construction of a Numerical Process with a CFD Code
Seung Taek Seo, Kwang Soon Lee and Bum Kyoo Choi Sogang University Yong Hee Lee Samsung Electronics Dae Rook Yang Korea University
Programming Characteristics of PRAM
Y.-T. Kim, Y.-N. Hwang, K.-H. Lee, S.-H. Lee, C.-W. Jeong, S.-J. Ahn, F. Yeung*, G.-H. Koh, H.-S. Jeong, W.-Y. Chung, T.-K. Kim, Y.-K. Park, K.-N. Kim, and J.-T. Kong Samsung Electronics
Optimal Design of an Energy Efficient Vacuum Furnace Using Thermal Analysis Database
Min-Ji Kim, Ho-Girl Jung, Jae-Woo Lee, Changjin Lee and Yung-Hwan Byun Konkuk University
Design, Analysis and Fabrication of a Meso-Scale Centrifugal Compressor
A. Laveau, J. S. Kapat, L. C. Chow, E. Enikov, K.B. Sundaram University of Central Florida
Aluminum Doping of Epitaxial Silicon Carbide
U. Forsberg, O. Danielsson, A. Henry, E. Janzen Linkoping University M.K. Linnarsson Royal Institute of Technology
Using N2 as precursor gas in III-nitride CVD growth
O. . Danielsson and E. Janzen Linkoping University
Reducing stress in silicon carbide epitaxial layers
O. Danielsson, C. Hallin, E. Janzen Linkoping University
Predicted nitrogen doping concentrations in silicon carbide epitaxial layers grown by hot-wall chemical vapor deposition
O. Danielsson, U. Forsberg, E. Janzen Linkoping University
Growth rate predictions of chemical vapor deposited silicon carbide epitaxial layers
O. Danielsson, A. Henry, E. Janzen Linkoping University
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