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Home arrow CFD Paper Library arrow Physics Used arrow Flow arrow Subcategories and papers
Physics Used - Flow
Programming Characteristics of PRAM
Y.-T. Kim, Y.-N. Hwang, K.-H. Lee, S.-H. Lee, C.-W. Jeong, S.-J. Ahn, F. Yeung*, G.-H. Koh, H.-S. Jeong, W.-Y. Chung, T.-K. Kim, Y.-K. Park, K.-N. Kim, and J.-T. Kong Samsung Electronics
Optimal Design of Water Jet Nozzles Utilizing Independence Design Axiom
Hyunsuk Shin and Jongsoo Lee Yonsei University
Optimal Design of an Energy Efficient Vacuum Furnace Using Thermal Analysis Database
Min-Ji Kim, Ho-Girl Jung, Jae-Woo Lee, Changjin Lee and Yung-Hwan Byun Konkuk University
Spatial distribution of resistive intergranular phase in stabilized zirconia estimated by millicontact impedance spectroscopy
Jong-Heun Lee, Young-Soo Jung, Doh-Yeon Kim Seoul National University Hyo-Sang Woo, Yong-Chae Chung Hanyang University
Design and Analysis of a Miniature Reciprocating Compressor Driven by a Comb Drive
Z. Hao, J. S. Kapat, L. C. Chow, K.B. Sundaram University of Central Florida
Design, Analysis and Fabrication of a Meso-Scale Centrifugal Compressor
A. Laveau, J. S. Kapat, L. C. Chow, E. Enikov, K.B. Sundaram University of Central Florida
Aluminum Doping of Epitaxial Silicon Carbide
U. Forsberg, O. Danielsson, A. Henry, E. Janzen Linkoping University M.K. Linnarsson Royal Institute of Technology
Using N2 as precursor gas in III-nitride CVD growth
O. . Danielsson and E. Janzen Linkoping University
Reducing stress in silicon carbide epitaxial layers
O. Danielsson, C. Hallin, E. Janzen Linkoping University
Predicted nitrogen doping concentrations in silicon carbide epitaxial layers grown by hot-wall chemical vapor deposition
O. Danielsson, U. Forsberg, E. Janzen Linkoping University
Growth rate predictions of chemical vapor deposited silicon carbide epitaxial layers
O. Danielsson, A. Henry, E. Janzen Linkoping University
Coupled Multiphysics Modeling of Semiconductor Lasers
Z. Sikorski, Y. Jiang, T. Czyszanowski, A. Przekwas, and M. Turowski CFD Research Corporation
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