ESI Group CFD Portal - ICP (Inductively Coupled Plasma) Reactor with Planar Coil in Argon

Axisymmetric inductively coupled plasma reactor used for SiO2 deposition in Ar/O2/SiH4 is modeled. The operating conditions are Pressure = 10 mTorr, Dimension (nozzle to wafer) of 16 cm, RF coil current = 15 A, 13.56 MHz, sonic inlet for Ar/SiH2/O2 and wall temperature of 300 K.

Details

This tutorial will allow the user to learn the following topics:

Model set up for a simple RF current driven ICP
Electron: quasi-neutrality; Ambi-polar electric field
Ion transport: drift-diffusion; mobility via Prandtl number
RF current (volumetric) source specification for ICP
BC for magnetic: fixed value (metal wall); extrapolation
BC for Te: 0-gradient or thermal flux
IC for plasma: Ne = SUM(Ni) ~ 1017
Parameters on convergence: relax on ion species
Neutral gas heating: ion surface recombination, etc